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Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique.
Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm.
Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns.
高純石墨烯粉末(物理法)$nThickness: 1~3nm Purity: 99wt%$nLayers: 3 Bulk density: 0.01~0.02g/ml$nSize: 5~8um Fe: 150ppm$n$nAppearance: Black powder
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