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簡(jiǎn)要描述：二硫化鉬晶體（2H-合成/99.995%/n 型） MoS2(Molybdenum Disulfide)-syn晶體尺寸:~10毫米電學(xué)性能：N型半導(dǎo)體晶體結(jié)構(gòu)：六邊形晶胞參數(shù)：a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°晶體類(lèi)型：合成晶體純度：＞99.995%
更新時(shí)間：2024-06-02產(chǎn)品型號(hào)： 廠商性質(zhì)：生產(chǎn)廠家訪 問(wèn) 量：2067詳細(xì)介紹
二硫化鉬晶體（2H-合成/99.995%/n 型） MoS2(Molybdenum Disulfide)-syn
晶體尺寸:~10毫米
電學(xué)性能：N型半導(dǎo)體
晶體結(jié)構(gòu)：六邊形
晶胞參數(shù)：a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°
晶體類(lèi)型：合成
晶體純度：＞99.995%
X-ray diffraction on a 2H-MoS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal MoS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoS2. Measurement was performed with a 785 nm Raman system at room temperature.
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